Share Email Print
cover

Proceedings Paper

An experimental investigation on high voltage GaAs photoconductive semiconductor switch
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this paper, we present the design and the fabrication method for high DC bias voltage photoconductive semiconductor switch (PCSS). By employing a low temperature grown molecular beam epitaxial GaAs (LT-MBE GaAs) and a proper protection coating to prevent air breakdown, the DC bias electric field can be significantly increased. Such a PCSS structure can effectively achieve a low DC dark current in a high voltage pulse generation system with smaller PCSS sizes. DC bias capability also eliminates the need of complicated synchronization. The application of high DC bias field PCSS will also be discussed.

Paper Details

Date Published: 18 August 2010
PDF: 8 pages
Proc. SPIE 7781, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV, 778112 (18 August 2010); doi: 10.1117/12.862144
Show Author Affiliations
Chia-En Yang, The Pennsylvania State Univ. (United States)
Jimmy Yao, The Pennsylvania State Univ. (United States)
Yun-Ching Chang, The Pennsylvania State Univ. (United States)
Shizhuo Yin, The Pennsylvania State Univ. (United States)


Published in SPIE Proceedings Vol. 7781:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV
Shizhuo Yin; Ruyan Guo, Editor(s)

© SPIE. Terms of Use
Back to Top