Share Email Print
cover

Proceedings Paper

Dislocation reduction in CdTe epilayers grown on silicon substrates using buffered nanostructures
Author(s): Shashidhar Shintri; Sunil Rao; Huafang Li; Ishwara Bhat; Smita Jha; C. Liu; Thomas Kuech; Witold Palosz; Sudhir Trivedi; Fred Semendy; Priyalal Wijewarnasuriya; Yuanping Chen
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High performance HgCdTe IR detector fabrication on silicon substrates first requires low defect density CdTe buffer layers to be grown on silicon. The objective of this paper is to demonstrate dislocation reduction in CdTe epitaxial layers grown on silicon substrate by using intermediate nanocrystalline CdTe buffer layers. Colloidal synthesis of high quality CdTe nanocrystals was accomplished and spin coating of these CdTe nanocrystals as buffer layers on silicon substrates was carried out. CdTe layers were grown on these buffered substrates by metalorganic chemical vapor deposition (MOCVD). However, the incomplete removal of SiO2 on silicon substrate (by chemical treatment) prevented the exact orientation of the nanocrystals with the silicon substrate and over layer growth of continuous single crystal CdTe epitaxial film. Two new approaches were further investigated: (i) First a thin film of Ge was grown on Si, followed by the deposition of thin SiO2 followed by nanopatterning using block co-polymer (BCP) lithography. Transmission electron microscopy (TEM) showed defect reduction in the CdTe layers grown on these substrates, but the x-ray rocking curves over a larger area gave wider full width half maximum values compared to that of layers grown on blanket surfaces. This was attributed to non uniform nanopatterning in these initial studies; (ii) SiO2 coated silicon substrates were nanopatterned using interference lithography with a honeycomb array of holes. These substrates will be used for the selective growth of germanium and CdTe by MOCVD.

Paper Details

Date Published: 27 August 2010
PDF: 9 pages
Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 77680A (27 August 2010); doi: 10.1117/12.861735
Show Author Affiliations
Shashidhar Shintri, Rensselaer Polytechnic Institute (United States)
Sunil Rao, Rensselaer Polytechnic Institute (United States)
Huafang Li, Rensselaer Polytechnic Institute (United States)
Ishwara Bhat, Rensselaer Polytechnic Institute (United States)
Smita Jha, Univ. of Wisconsin-Madison (United States)
C. Liu, Univ. of Wisconsin-Madison (United States)
Thomas Kuech, Univ. of Wisconsin-Madison (United States)
Witold Palosz, Brimrose Corp. of America (United States)
Sudhir Trivedi, Brimrose Corp. of America (United States)
Fred Semendy, Army Research Lab. (United States)
Priyalal Wijewarnasuriya, Army Research Lab. (United States)
Yuanping Chen, Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 7768:
Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II
M. Saif Islam; Nobuhiko P. Kobayashi; A. Alec Talin, Editor(s)

© SPIE. Terms of Use
Back to Top