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Proceedings Paper

In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices
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Paper Abstract

We demonstrate a post-growth in-situ chlorine passivation for suppressing surface-dominant transport in Si nanowires (SiNWs). The leakage current of bridged SiNWs suppressed more than five orders of magnitude as a result of chlorine passivation while the shape and structural properties of the bridging NWs remain unaffected by the post-growth in-situ HCl passivation. The chlorine passivated SiNW surfaces were found to be beneficial to enhance the high immunity to environmental degradation.

Paper Details

Date Published: 27 August 2010
PDF: 5 pages
Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 77680R (27 August 2010); doi: 10.1117/12.861607
Show Author Affiliations
Ja-Yeon Kim, Univ. of California, Davis (United States)
Min-Ki Kwon, Univ. of California, Davis (United States)
Chosun Univ. (Korea, Republic of)
Logeeswaran V. J., Univ. of California, Davis (United States)
Sonia Grego, Univ. of California, Davis (United States)
RTI International (United States)
M. Saif Islam, Univ. of California, Davis (United States)


Published in SPIE Proceedings Vol. 7768:
Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II
M. Saif Islam; Nobuhiko P. Kobayashi; A. Alec Talin, Editor(s)

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