Share Email Print
cover

Proceedings Paper

Temperature-dependent structural characterization of silicon <110> nanowires
Author(s): Min-Ki Kwon; Ja-Yeon Kim; Logeeswaran V. J.; Yi-Ju Teng; Hui-Lin Hsu; Patricia Abellán Baeza; Ilke Arslan; M. Saif Islam
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

For high speed and performance field effect transistor with high carrier mobility, vertically aligned Si <110> nanowires is demonstrated by chemical vapor deposition via a vapor-liquid-solid growth mechanism. We found that the orientation of NWs was changed from <111> direction to <110> direction on a Si (110) substrate with increasing the growth temperature above ~ 610°C by changing Au-Si eutectic phase. These vertically aligned <110> oriented SiNWs with significantly high carrier mobility opens up new opportunities for high speed and performance future electronic device applications.

Paper Details

Date Published: 27 August 2010
PDF: 6 pages
Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 77680H (27 August 2010); doi: 10.1117/12.861606
Show Author Affiliations
Min-Ki Kwon, Univ. of California, Davis (United States)
Chosun Univ. (Korea, Republic of)
Ja-Yeon Kim, Univ. of California, Davis (United States)
Logeeswaran V. J., Univ. of California, Davis (United States)
Yi-Ju Teng, Univ. of California, Davis (United States)
Hui-Lin Hsu, Univ. of California, Davis (United States)
Patricia Abellán Baeza, Univ. of California, Davis (United States)
Ilke Arslan, Univ. of California, Davis (United States)
M. Saif Islam, Univ. of California, Davis (United States)


Published in SPIE Proceedings Vol. 7768:
Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II
M. Saif Islam; Nobuhiko P. Kobayashi; A. Alec Talin, Editor(s)

© SPIE. Terms of Use
Back to Top