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Proceedings Paper

Organic field-effect transistors applicable for gas and ion detection
Author(s): A. Klug; K. Schmoltner; E. J. W. List
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Paper Abstract

Aside from other target applications, organic field-effect transistors (OFETs) are also promising devices for sensing various kinds of analytes, including gases, ions and biomolecules. In this work ion-sensitive polymer-based OFETs will be discussed. In detail, operational device instabilities caused by the movement of mobile ions in poly(3-hexylthiophene)-based OFETs are investigated, when (a) an ion-containing gate dielectric, polyvinyl alcohol (PVA), is applied in a top-gate architecture and (b) ions are deliberately added to the organic semiconductor in a bottom-gate architecture. The underlying mechanisms for the observed source-to-drain channel current drifts upon bias stress are thoroughly explained. In addition, device instabilities due to mobile ions within the dielectric are demonstrated with rigid and flexible PVA-based OFETs including inkjet-printed source/drain electrodes and a meander-shaped top-gate architecture, the latter enabling the realization of smart, integrated and low-cost OFET-based sensor systems.

Paper Details

Date Published: 31 August 2010
PDF: 15 pages
Proc. SPIE 7779, Organic Semiconductors in Sensors and Bioelectronics III, 77790G (31 August 2010); doi: 10.1117/12.861602
Show Author Affiliations
A. Klug, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
K. Schmoltner, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
E. J. W. List, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Technische Univ. Graz (Austria)


Published in SPIE Proceedings Vol. 7779:
Organic Semiconductors in Sensors and Bioelectronics III
Ruth Shinar; Ioannis Kymissis, Editor(s)

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