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Proceedings Paper

Performance improvement of AlN/GaN-based intersubband detectors thanks to quantum dot active regions
Author(s): Daniel Hofstetter; Joab Di Francesco; Esther Baumann; Fabrizio Raphael Giorgetta; Prem Kumar Kandaswamy; Aparna Das; Sirona Valdueza-Felip; Eva Monroy
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Paper Abstract

Since the operating mode of 1.55 μm AlN/GaN-based intersubband photodetectors is based on optical rectification, both the excited state lifetime and the lateral displacement of the carriers play an important role for performance optimization. We thus show here results of an improved detector generation based on a novel type of active region. Thanks to the use of quantum dots instead of quantum wells, a factor of 60 could be gained in terms of maximum responsivity. In addition, the maximum performance was achieved at a considerably higher temperature of 160 K instead of 80 K as typically seen for quantum wells.

Paper Details

Date Published: 28 August 2010
PDF: 8 pages
Proc. SPIE 7808, Infrared Remote Sensing and Instrumentation XVIII, 78080A (28 August 2010); doi: 10.1117/12.861569
Show Author Affiliations
Daniel Hofstetter, Univ. of Neuchâtel (Switzerland)
Joab Di Francesco, Univ. of Neuchâtel (Switzerland)
Esther Baumann, National Institute of Standards and Technology (United States)
Fabrizio Raphael Giorgetta, National Institute of Standards and Technology (United States)
Prem Kumar Kandaswamy, CEA Grenoble (France)
Aparna Das, CEA Grenoble (France)
Sirona Valdueza-Felip, CEA Grenoble (France)
Eva Monroy, CEA Grenoble (France)


Published in SPIE Proceedings Vol. 7808:
Infrared Remote Sensing and Instrumentation XVIII
Marija Strojnik; Gonzalo Paez, Editor(s)

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