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Proceedings Paper

The scaling laws applied to the metal-insulator transition in n-type GaAs semiconductor
Author(s): A. El Kaaouachi; N. Ait Ben Ameur; B. Capoen; A. Nafidi; J. Hemine; R. Abdia; H. Sahsah; A. Sybous; A. Narjis; G. Biskupski
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Paper Abstract

The metal-insulator transition (MIT) induced by magnetic field, in barely metallic and compensated n-type GaAs has been analyzed using a scale theory. The experiments were carried out at low temperature in the range (4.2 -0.066 K) and in magnetic field up to 4 T. We have determined the magnetic field for which the conductivity changes from the metallic behaviour to insulator regime. On the metallic side of the MIT, the electrical conductivity is found to obey σ = σ + mT1/2 down to 66 mK. The zero-temperature conductivity can be described by scaling laws.

Paper Details

Date Published: 30 August 2010
PDF: 4 pages
Proc. SPIE 7758, Physical Chemistry of Interfaces and Nanomaterials IX, 775805 (30 August 2010); doi: 10.1117/12.861461
Show Author Affiliations
A. El Kaaouachi, Univ. Ibn Zohr (Morocco)
N. Ait Ben Ameur, Univ. Ibn Zohr (Morocco)
B. Capoen, CERLA, CNRS, Univ. des Sciences et Technologies de Lille I (France)
A. Nafidi, Univ. Ibn Zohr (Morocco)
J. Hemine, Lab. de Physique de la Matière Condensée (Morocco)
R. Abdia, Univ. Ibn Zohr (Morocco)
H. Sahsah, Univ. Ibn Zohr (Morocco)
A. Sybous, Univ. Ibn Zohr (Morocco)
A. Narjis, Univ. Ibn Zohr (Morocco)
G. Biskupski, Univ. des Sciences et Technologies de Lille I (France)


Published in SPIE Proceedings Vol. 7758:
Physical Chemistry of Interfaces and Nanomaterials IX
Oleg V. Prezhdo, Editor(s)

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