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Proceedings Paper

In situ probing thickness dependence of the field effect mobility of naphthalenetetracarboxylic diimide-based field effect transistors
Author(s): Shun-Wei Liu; Chih-Chien Lee; Hung-Lin Tai; Je-Min Wen; Chin-Ti Chen
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Paper Abstract

We present an in situ vacuum measurement in the study of electrical characteristics of n-channel OFETs based on NTCDI-C8F15 semiconductors. Electron mobility of NTCDI-C8F15 OFETs was estimated as a function of the number of ML using in situ electrical measurement. The electron mobility has been observed for the thin film transistor of NTCDI-C8F15 as thin as 2 ML (~ 5.4 nm). Field-effect mobilities rapidly increase with the increase of the film thickness. Electron mobility of OFETs reaches saturation thickness (d0) about 3.5 ML. Our experimental results indicated that the molecular layers beyond d0 contribute little to the carrier transport in the semiconducting channel. Our experimental results have demonstrated that the grown fashion of the first few ML of NTCDI-C8F15 on the substrate strongly influences the carrier mobility, threshold voltage, and on-off ratio. Keywords: NTCDI, OFET, carrier mobility, in-situ, n-type semiconductor, monolayer

Paper Details

Date Published: 17 August 2010
PDF: 8 pages
Proc. SPIE 7778, Organic Field-Effect Transistors IX, 77780X (17 August 2010); doi: 10.1117/12.861360
Show Author Affiliations
Shun-Wei Liu, Academia Sinica (Taiwan)
Chih-Chien Lee, National Taiwan Univ. of Science and Technology (Taiwan)
Hung-Lin Tai, National Taiwan Univ. of Science and Technology (Taiwan)
Je-Min Wen, National Taiwan Univ. of Science and Technology (Taiwan)
Chin-Ti Chen, Academia Sinica (Taiwan)

Published in SPIE Proceedings Vol. 7778:
Organic Field-Effect Transistors IX
Zhenan Bao; Iain McCulloch, Editor(s)

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