Share Email Print
cover

Proceedings Paper

Vertically aligned silicon nanowires fabricated by electroless etching of silicon wafer
Author(s): Sabar D. Hutagalung; Agnes S. Y. Tan; Ruo Y. Tan; Yussof Wahab
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Silicon nanowires were synthesized by electroless etching of Si(100) wafer using a mixture of hydrofluoric acid and silver nitrate. The formation of nanowires was catalyzed by silver nanoclusters deposit through an exchange reaction in which both silicon oxidation and silver reduction occur simultaneously on silicon surface. The etchant concentration, etching temperature and duration were well controlled in this work to produce a high aspect ratio of silicon nanowires. The morphological observation indicated that the fabricated silicon nanowires grown vertically on silicon surface. Moreover, a various shapes of rounded-, rectangular-, and triangle-shape are obtained co-exist in the bundle of silicon nanowires.

Paper Details

Date Published: 19 May 2010
PDF: 7 pages
Proc. SPIE 7743, Southeast Asian International Advances in Micro/Nanotechnology, 774305 (19 May 2010); doi: 10.1117/12.861353
Show Author Affiliations
Sabar D. Hutagalung, Univ. Sains Malaysia (Malaysia)
Agnes S. Y. Tan, Univ. Sains Malaysia (Malaysia)
Ruo Y. Tan, Univ. Sains Malaysia (Malaysia)
Yussof Wahab, Univ. Teknologi Malaysia (Malaysia)


Published in SPIE Proceedings Vol. 7743:
Southeast Asian International Advances in Micro/Nanotechnology
Waleed S. Mohammed; Te-Yuan Chung, Editor(s)

© SPIE. Terms of Use
Back to Top