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Proceedings Paper

Band structures and density of state of Ge/GeSiSn type-I quantum wells
Author(s): W. J. Fan
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Paper Abstract

The band structures and density of state of tensile strained Ge/GeSiSn QWs with different Sn composition are investigated by using 6-band k.p method. The band lineups of Ge/GeSiSn are given. The hole energy dispersion curves and density of state are calculated. The results are helpful for Si photonics device design.

Paper Details

Date Published: 19 May 2010
PDF: 7 pages
Proc. SPIE 7743, Southeast Asian International Advances in Micro/Nanotechnology, 774309 (19 May 2010); doi: 10.1117/12.861346
Show Author Affiliations
W. J. Fan, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 7743:
Southeast Asian International Advances in Micro/Nanotechnology
Waleed S. Mohammed; Te-Yuan Chung, Editor(s)

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