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Proceedings Paper

Thermal transient characteristics of flip chip high power light emitting diodes
Author(s): Chien-Ping Wang; Tzung-Te Chen; Shih-Chun Yang; Han-Kuei Fu; An-Tse Lee; Pei-Ting Chou; Chien-Jen Sun; Chiu-Ling Chen; Mu-Tao Chu
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Paper Abstract

The die-attached quality and the thermal transient characteristics of high power flip chip light emitting diodes (LEDs) are investigated using thermal transient tester. Various die-attached materials were utilized to compare the difference in their thermal resistances and long term performance. By applying accelerated aging stress, the deterioration rates at the die-attached layers were obtained. Numerical simulation provided further understanding of LED device temperature distribution and also revealed that the thermal variance at the die-attached interface can be recognized within only few milliseconds for the flip chip structure. The effects of bump arrangement and material were analyzed to achieve high temperature uniformity and low thermal resistance for high power LEDs.

Paper Details

Date Published: 18 August 2010
PDF: 7 pages
Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 77840T (18 August 2010); doi: 10.1117/12.861083
Show Author Affiliations
Chien-Ping Wang, Industrial Technology Research Institute (Taiwan)
Tzung-Te Chen, Industrial Technology Research Institute (Taiwan)
Shih-Chun Yang, Industrial Technology Research Institute (Taiwan)
Han-Kuei Fu, Industrial Technology Research Institute (Taiwan)
An-Tse Lee, Industrial Technology Research Institute (Taiwan)
Pei-Ting Chou, Industrial Technology Research Institute (Taiwan)
Chien-Jen Sun, Industrial Technology Research Institute (Taiwan)
Chiu-Ling Chen, Industrial Technology Research Institute (Taiwan)
Mu-Tao Chu, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 7784:
Tenth International Conference on Solid State Lighting
Ian Ferguson; Matthew H. Kane; Nadarajah Narendran; Tsunemasa Taguchi, Editor(s)

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