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Proceedings Paper

HgCdTe LWIR p-on-n photodiodes formed by arsenic diffusion from the vapor phase
Author(s): F. T. J. Smith; P. Lamarre; J. Marciniec; S. Tobin; T. Parodos; P. LoVecchio; K. Wong; M. B. Reine; E. Bellotti; P. LeVan; A. Hahn; D. Bliss
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Paper Abstract

We report current-voltage data for back-illuminated mesa photodiode test structures fabricated by arsenic-diffusion into n-type LPE HgCdTe films. Arsenic diffusion was carried out in a sealed quartz ampoule containing a source of both Hg and As. The arsenic-diffused p-on-n photodiodes were characterized at 70 K and 80 K. The cutoff wavelength was about 11 μm at 80 K. The data for 400 μm diameter photodiodes fabricated by the arsenic diffusion process are very similar to those from a conventional two-layer LPE P-on-n process for material with approximately the same cutoff wavelength. We outline process and doping level changes that should improve detector performance.

Paper Details

Date Published: 26 August 2010
PDF: 7 pages
Proc. SPIE 7780, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon, 77800I (26 August 2010); doi: 10.1117/12.861079
Show Author Affiliations
F. T. J. Smith, Photronix Inc. (United States)
P. Lamarre, Photronix Inc. (United States)
J. Marciniec, BAE Systems (United States)
S. Tobin, BAE Systems (United States)
T. Parodos, BAE Systems (United States)
P. LoVecchio, BAE Systems (United States)
K. Wong, BAE Systems (United States)
M. B. Reine, BAE Systems (United States)
E. Bellotti, Boston Univ. (United States)
P. LeVan, Air Force Research Lab. (United States)
A. Hahn, Air Force Research Lab. (United States)
D. Bliss, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 7780:
Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon
Eustace L. Dereniak; Randolph E. Longshore; Manijeh Razeghi; John P. Hartke; Ashok K. Sood; Paul D. LeVan, Editor(s)

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