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Proceedings Paper

Electrostatic control of magnetism in all-oxide multiferroic heterostructures
Author(s): C. A. F. Vaz; J. Hoffman; Y. Segal; F. J. Walker; C. H. Ahn
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Paper Abstract

Much effort has been devoted recently to designing systems exhibiting simultaneous magnetic and ferroelectric order (multiferroics) with a strong magnetoelectric coupling, which could enable the electrostatic control of magnetism in the solid state. One approach consists of exploring interfacial couplings between magnetic and ferroelectric phases of composite systems, where magnetoelectric couplings larger than those typical of single-phase multiferroics have been achieved. Here, we overview our recent work on epitaxial Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 (PZT/LSMO) heterostructures tailored to display a large magnetoelectric coupling, which relies on the sensitivity of the magnetic properties of the doped manganites to charge. The magnetoelectric response in this system is hysteretic, displaying abrupt switching between two magnetic states for the two states of the ferroelectric polarization. The microscopic origin of this effect, which is studied using advanced spectroscopic techniques, arises from changes of the valence state of Mn in LSMO induced by the electrostatic modulation in the charge carrier density. Hence, the magnetoelectric coupling in these multiferroic heterostructures is charge-based and electronic in origin. From a quantitative comparison between the measured change in valency and magnetic moment, we conclude that the interfacial spin ordering is modified upon charge doping. This ability to control spin via electric fields opens a new pathway for the development of novel spin-based technologies.

Paper Details

Date Published: 25 August 2010
PDF: 9 pages
Proc. SPIE 7760, Spintronics III, 776013 (25 August 2010); doi: 10.1117/12.861070
Show Author Affiliations
C. A. F. Vaz, Yale Univ. (United States)
J. Hoffman, Yale Univ. (United States)
Y. Segal, Yale Univ. (United States)
F. J. Walker, Yale Univ. (United States)
C. H. Ahn, Yale Univ. (United States)


Published in SPIE Proceedings Vol. 7760:
Spintronics III
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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