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Proceedings Paper

Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD
Author(s): M. Buegler; S. Gamage; R. Atalay; J. Wang; I. Senevirathna; R. Kirste; T. Xu; M. Jamil; I. Ferguson; J. Tweedie; R. Collazo; A. Hoffmann; Z. Sitar; N. Dietz
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Paper Abstract

Results on the achievable growth temperature as a function of the reactor pressure for the growth of InN by high-pressure CVD are presented. As the reactor pressure was increased from 1 bar to 19 bar, the optimal growth temperature raised from 759°C to 876°C, an increase of 6.6 °C/bar. The InN layers were grown in a horizontal flow channel reactor, using a pulsed precursor injection scheme. The structural and optical properties of the epilayers have been investigated by Raman spectroscopy, X-ray diffraction, and IR reflectance spectroscopy.

Paper Details

Date Published: 18 August 2010
PDF: 7 pages
Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 77840F (18 August 2010); doi: 10.1117/12.860952
Show Author Affiliations
M. Buegler, Georgia State Univ. (United States)
Technische Univ. Berlin (Germany)
S. Gamage, Georgia State Univ. (United States)
R. Atalay, Georgia State Univ. (United States)
J. Wang, Georgia State Univ. (United States)
I. Senevirathna, Georgia State Univ. (United States)
R. Kirste, Technische Univ. Berlin (Germany)
T. Xu, Georgia Institute of Technology (United States)
M. Jamil, Georgia Institute of Technology (United States)
I. Ferguson, The Univ. of North Carolina at Charlotte (United States)
J. Tweedie, North Carolina State Univ. (United States)
R. Collazo, North Carolina State Univ. (United States)
A. Hoffmann, Technische Univ. Berlin (Germany)
Z. Sitar, North Carolina State Univ. (United States)
N. Dietz, Georgia State Univ. (United States)


Published in SPIE Proceedings Vol. 7784:
Tenth International Conference on Solid State Lighting
Ian Ferguson; Matthew H. Kane; Nadarajah Narendran; Tsunemasa Taguchi, Editor(s)

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