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Proceedings Paper

Influence of the dewetting phenomenon on the zinc distribution in CdZnTe crystals grown by dewetted Bridgman technique
Author(s): Liliana Braescu
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Paper Abstract

The unusual thermophysical properties (high melt viscosity, large latent heat of fusion, fairly large equilibrium segregation coefficient, etc.) cause considerable difficulty in maintaining uniform zinc composition in the CdZnTe grown crystals. However, industrial applications still require larger high structural quality and homogeneous single crystals with a very low dislocation density, no grains nor twins. These improvements are facilitated by dewetting phenomenon in which the crystal is grown detached from the ampoule wall by a liquid free surface at the level of the solid-liquid interface, called liquid meniscus, which creates a gap between the grown crystal and the ampoule wall. In order to evaluate numerically Zn distribution in CdZnTe crystals grown by dewetted Bridgman technique using a pyrolitic boron nitride (pBN)-coated quartz ampoule, a pseudo quasi-steady state model is considered. The coupled incompressible Navier-Stokes in Boussinesq approximation, convection-conduction and conservative convectiondiffusion equations are solved by finite element technique through COMSOL Multiphysics software in the framework of a 2D axisymmetric geometry. Due to the existence of the free surface (meniscus), the Marangoni effect is considered and for its implementation the weak form of the boundary application mode is employed. The effect of the dewetting phenomenon on the zinc distribution is discussed and compared with data reported for crystals grown by classical Bridgman technique.

Paper Details

Date Published: 18 August 2010
PDF: 10 pages
Proc. SPIE 7781, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV, 77810A (18 August 2010); doi: 10.1117/12.860945
Show Author Affiliations
Liliana Braescu, West Univ. of Timisoara (Romania)


Published in SPIE Proceedings Vol. 7781:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV
Shizhuo Yin; Ruyan Guo, Editor(s)

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