Share Email Print
cover

Proceedings Paper

High efficiency optoelectronic terahertz sources
Author(s): Jean-François Lampin; Emilien Peytavit; Tahsin Akalin; G. Ducournau; Francis Hindle; Gael Mouret
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We have developed a new generation of optoelectronic large bandwidth terahertz sources based on TEM horn antennas monolithically integrated with several types of photodetectors: low-temperature grown GaAs (LTG-GaAs) planar photoconductors, vertically integrated LTG-GaAs photoconductors on silicon substrate and uni-travelling-carrier photodiodes. Results of pulsed (time-domain) and photomixing (CW, frequency domain) experiments are presented.

Paper Details

Date Published: 27 August 2010
PDF: 7 pages
Proc. SPIE 7763, Terahertz Emitters, Receivers, and Applications, 77630A (27 August 2010); doi: 10.1117/12.860883
Show Author Affiliations
Jean-François Lampin, Institut d'Electronique, de Microélectronique et de Nanotechnologie, CNRS, Univ. de Lille 1 (France)
Emilien Peytavit, Institut d'Electronique, de Microélectronique et de Nanotechnologie, CNRS, Univ. de Lille 1 (France)
Tahsin Akalin, Institut d'Electronique, de Microélectronique et de Nanotechnologie, CNRS, Univ. de Lille 1 (France)
G. Ducournau, Institut d'Electronique, de Microélectronique et de Nanotechnologie, CNRS, Univ. de Lille 1 (France)
Francis Hindle, Lab. de Physico-Chimie de l'Atmosphère, CNRS, Univ. du Littoral Côte d'Opale (France)
Gael Mouret, Lab. de Physico-Chimie de l'Atmosphère, CNRS, Univ. du Littoral Côte d'Opale (France)


Published in SPIE Proceedings Vol. 7763:
Terahertz Emitters, Receivers, and Applications
Jean-François Lampin; Didier J. Decoster; Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top