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Proceedings Paper

Tensile strained III-V self-assembled nanostructures on a (110) surface
Author(s): Minjoo Larry Lee; Paul J. Simmonds
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Paper Abstract

The vast majority of research on epitaxial quantum dots use compressive strain as the driving force for self-assembly on the (001) surface, with InAs/GaAs(001) and Ge/Si(001) being the best-known examples. In this talk, I will discuss our work on determining the feasibility of growing coherent, tensile-strained III-V nanostructures on a (110) surface. GaP on GaAs(110) was chosen as an initial test system. It is hoped that our efforts on self-assembled, tensile-strained dots on a (110) surface will lead the way to new devices exploiting the fundamental differences between the (110) and (001) surfaces. Furthermore it is anticipated that this work will form the first step towards a more general description of self-assembled nanostructure growth under tensile strain.

Paper Details

Date Published: 27 August 2010
PDF: 7 pages
Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 776805 (27 August 2010); doi: 10.1117/12.860781
Show Author Affiliations
Minjoo Larry Lee, Yale Univ. (United States)
Paul J. Simmonds, Yale Univ. (United States)


Published in SPIE Proceedings Vol. 7768:
Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II
M. Saif Islam; Nobuhiko P. Kobayashi; A. Alec Talin, Editor(s)

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