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Proceedings Paper

Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth
Author(s): Pornsak Srisungsitthisunti; Euclid E. Moon; Chookiat Tansarawiput; Huaichen Zhang; Minghao Qi; Xianfan Xu
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Paper Abstract

We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a CVD process. ISPI makes use of diffracting fringes from gratings and checkerboards fabricated on the mask to determine the correct gapping distance for the focusing zone plates. The method is capable of detecting alignment inside a gas-flow chamber with variable pressure.

Paper Details

Date Published: 24 August 2010
PDF: 7 pages
Proc. SPIE 7767, Instrumentation, Metrology, and Standards for Nanomanufacturing IV, 776707 (24 August 2010); doi: 10.1117/12.860581
Show Author Affiliations
Pornsak Srisungsitthisunti, Purdue Univ. (United States)
Euclid E. Moon, Massachusetts Institute of Technology (United States)
Chookiat Tansarawiput, Purdue Univ. (United States)
Huaichen Zhang, Purdue Univ. (United States)
Minghao Qi, Purdue Univ. (United States)
Xianfan Xu, Purdue Univ. (United States)

Published in SPIE Proceedings Vol. 7767:
Instrumentation, Metrology, and Standards for Nanomanufacturing IV
Michael T. Postek, Editor(s)

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