Share Email Print
cover

Proceedings Paper

Improving the optical and electrical properties of fluorine-doped tin oxide films by various post-annealing treatments
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Transparent conducting Fluorine-doped tin oxide (FTO) thin films were deposited on glass substrates by pulsed DC magnetron sputtering from cost saving metal targets. We observed lower resistivity and higher average transmittance in the visible range after the application of various post heating treatments. The electrical and optical properties of FTO films were investigated. When the annealing temperature is 400°C in air, the average transmittance is 79.79% with the lowest resistivity of 1.38×10-3 Ω-cm, carrier density of 2.27×1020 cm-3 and mobility of 20 cm2/ V-s. When the annealing temperature is 400°Cin a H2 5%+N2 95% atmosphere, the average transmittance is 79.75 % with the lowest resistivity of 1.26×10-3 Ω-cm, carrier density of 2.17×1020 cm-3 and mobility of 22.8 cm2/ V-s. When the annealing temperature is 350 °C in vacuum, the average transmittance is 80.48% with the lowest resistivity of 1.23×10-3 Ω-cm, carrier density of 4.40×1020 cm-3 and mobility of 11.6 cm2/ V-s.

Paper Details

Date Published: 20 August 2010
PDF: 8 pages
Proc. SPIE 7786, Current Developments in Lens Design and Optical Engineering XI; and Advances in Thin Film Coatings VI, 77860Q (20 August 2010); doi: 10.1117/12.860492
Show Author Affiliations
Pin-Jen Chen, National Central Univ. (Taiwan)
Bo-Huei Liao, National Central Univ. (Taiwan)
Chien-Cheng Kuo, National Central Univ. (Taiwan)
Cheng-Chung Lee, National Central Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7786:
Current Developments in Lens Design and Optical Engineering XI; and Advances in Thin Film Coatings VI
R. Barry Johnson; Virendra N. Mahajan; Simon Thibault, Editor(s)

© SPIE. Terms of Use
Back to Top