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Proceedings Paper

Influence of point defects on the performance of InVO4 photoanodes
Author(s): Roel Van de Krol; Julie Ségalini; Cristina S. Enache
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Paper Abstract

The properties of thin film InVO4 photoanodes for water splitting have been studied. Compact films of InVO4 were prepared by spray pyrolysis and are found to be stable between pH 3 - 11. Although the indirect bandgap is 3.2 eV, a modest amount of visible light absorption is observed. The origin of this absorption is attributed to the presence of deep donor states at ~0.7 eV below the conduction band. Shallow donors are absent in this material, in contrast to what is normally observed for metal oxides. The deep donor model explains the much stronger visible light absorption of powders compared to thin films, and is supported by photoluminescence data. The origin of the deep donors is attributed to deviations in the In:V ratio, and the corresponding defect-chemical reactions will be discussed.

Paper Details

Date Published: 24 August 2010
PDF: 9 pages
Proc. SPIE 7770, Solar Hydrogen and Nanotechnology V, 77700S (24 August 2010); doi: 10.1117/12.860463
Show Author Affiliations
Roel Van de Krol, Delft Univ. of Technology (Netherlands)
Julie Ségalini, Delft Univ. of Technology (Netherlands)
Cristina S. Enache, Delft Univ. of Technology (Netherlands)

Published in SPIE Proceedings Vol. 7770:
Solar Hydrogen and Nanotechnology V
Hicham Idriss; Heli Wang, Editor(s)

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