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Proceedings Paper

Stress analysis of Mo, MoSi2 and Si mono-layer thin films and multilayers prepared by magnetron sputtering
Author(s): Jingtao Zhu; Qiushi Huang; Haochuan Li; Fengli Wang; Xiaoqiang Wang; Zhanshan Wang; Lingyan Chen
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Paper Abstract

To improve the stress property of multilayer optics working in extreme ultraviolet and x-ray range, mono-layer thin films of Mo, MoSi2, Si, with thickness of 100nm, and periodic multilayers of [Mo/Si]20, [MoSi2/Si]20, with period thickness of 20nm, were prepared by direct current magnetron sputtering method. Before and after each deposition, the radius of surface curvatures of substrates were measured using a stylus profiler and then the film stress was calculated. The measurement results indicate that, Mo, MoSi2 and Si mono-layer thin films all shows compressive stress, while Mo/Si multilayer shows tensile stress, i.e., the film stress changes significantly during Mo/Si multilayer growth. For MoSi2/Si multilayer, the film stress still keeps compressive, which indicates more stable stress property.

Paper Details

Date Published: 6 October 2010
PDF: 7 pages
Proc. SPIE 7802, Advances in X-Ray/EUV Optics and Components V, 78020E (6 October 2010); doi: 10.1117/12.860268
Show Author Affiliations
Jingtao Zhu, Tongji Univ. (China)
Qiushi Huang, Tongji Univ. (China)
Haochuan Li, Tongji Univ. (China)
Fengli Wang, Tongji Univ. (China)
Xiaoqiang Wang, Tongji Univ. (China)
Zhanshan Wang, Tongji Univ. (China)
Lingyan Chen, Tongji Univ. (China)


Published in SPIE Proceedings Vol. 7802:
Advances in X-Ray/EUV Optics and Components V
Shunji Goto; Ali M. Khounsary; Christian Morawe, Editor(s)

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