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Proceedings Paper

Photoluminescence study of optically trapped InP semiconductor nanowires
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Paper Abstract

We report on the dynamics of micro-photoluminescence of single InP semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studied were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from one to ten micrometers. Our results show that the band-edge emission from trapped nanowires exhibits a quenching of the initial intensity with a characteristic time scale of a few seconds and an associated spectral red shift is also observed in the mixed phase nanowires.

Paper Details

Date Published: 27 August 2010
PDF: 6 pages
Proc. SPIE 7762, Optical Trapping and Optical Micromanipulation VII, 77620R (27 August 2010); doi: 10.1117/12.860236
Show Author Affiliations
Fan Wang, The Univ. of New South Wales (Australia)
Wen Jun Toe, The Univ. of New South Wales (Australia)
Suriati Paiman, The Australian National Univ. (Australia)
Qiang Gao, The Australian National Univ. (Australia)
Michael Gal, The Univ. of New South Wales (Australia)
H. Hoe Tan, The Australian National Univ. (Australia)
C. Jagadish, The Australian National Univ. (Australia)
Peter J. Reece, The Univ. of New South Wales (Australia)


Published in SPIE Proceedings Vol. 7762:
Optical Trapping and Optical Micromanipulation VII
Kishan Dholakia; Gabriel C. Spalding, Editor(s)

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