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Proceedings Paper

Study of surface electrical properties of InAlGaAs structures grown on InP substrates
Author(s): Chung-Chih Chang; Ming-Seng Hsu; Yau-Chyr Wang; Wei-Juann Chen; Jen-Wei Huang; Sih-You Huang; Bo-Han Wang; Syuan-Hong Chen
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Paper Abstract

Room temperature photoreflectance (PR) was used to investigate the energy gaps transition, the surface state densities and the surface barrier height of InxAlyGa1-x-yAs, in a series of epitaxial surface intrinsic-n+ structures with different Al concentration. Features of Franz-Keldysh oscillations originating from the built-in electric field in the intrinsic top layer were observed. Based on the thermionic emission theory and current-transport theory, the surface state density can be determined from the square of maximum electric field as a function of various pump beam flux intensities.

Paper Details

Date Published: 11 September 2010
PDF: 8 pages
Proc. SPIE 7754, Metamaterials: Fundamentals and Applications III, 77542C (11 September 2010); doi: 10.1117/12.860108
Show Author Affiliations
Chung-Chih Chang, Chinese Military Academy (Taiwan)
Ming-Seng Hsu, Chinese Military Academy (Taiwan)
Yau-Chyr Wang, Nan Jeon Institute of Technology (Taiwan)
Wei-Juann Chen, National Cheng Kung Univ. (Taiwan)
Jen-Wei Huang, Chinese Military Academy (Taiwan)
Sih-You Huang, Chinese Military Academy (Taiwan)
Bo-Han Wang, Chinese Military Academy (Taiwan)
Syuan-Hong Chen, Chinese Military Academy (Taiwan)


Published in SPIE Proceedings Vol. 7754:
Metamaterials: Fundamentals and Applications III
Allan D. Boardman; Nader Engheta; Mikhail A. Noginov; Nikolay I. Zheludev, Editor(s)

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