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Proceedings Paper

Tuning of the electronic characteristics of ZnO nanowire transistors and their logic device application
Author(s): Woong-Ki Hong; Gunho Jo; Minhyock Choe; Woojin Park; Jongwon Yoon; Takhee Lee
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Paper Abstract

We present the tuning of electrical characteristics of ZnO nanowire field effect transistors (FETs) by controlling surface morphology and size of nanowires and by introducing proton-irradiation-assisted manipulation and further demonstrate their logic inverter circuit. The FETs made from surface-architecture-controlled ZnO nanowires exhibit two different types of operation modes, which are distinguished as depletion and enhancement modes in terms of the polarity of the threshold voltage. We also explain that the electrical transport behaviors are associated with the influence of surface states. In addition, we demonstrate the proton irradiation effects on the electrical characteristics of two different types of FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate. The photoluminescence studies of the ZnO nanowires provide substantial evidence that the observed threshold voltage shift in nanowire transistors can be explained by a surface-band-bending through the gate electric field modulation, resulting from the irradiation-induced charges. Finally, as a practical approach, we demonstrate the logic inverter circuits made from the operation mode-controlled ZnO nanowire FETs.

Paper Details

Date Published: 27 August 2010
PDF: 14 pages
Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 77680J (27 August 2010); doi: 10.1117/12.860042
Show Author Affiliations
Woong-Ki Hong, Gwangju Institute of Science and Technology (Korea, Republic of)
Univ. of Cambridge (United Kingdom)
Gunho Jo, Gwangju Institute of Science and Technology (Korea, Republic of)
Minhyock Choe, Gwangju Institute of Science and Technology (Korea, Republic of)
Woojin Park, Gwangju Institute of Science and Technology (Korea, Republic of)
Jongwon Yoon, Gwangju Institute of Science and Technology (Korea, Republic of)
Takhee Lee, Gwangju Institute of Science and Technology (Korea, Republic of)


Published in SPIE Proceedings Vol. 7768:
Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II
M. Saif Islam; Nobuhiko P. Kobayashi; A. Alec Talin, Editor(s)

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