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Proceedings Paper

High brightness GaN light emitting diodes with different barrier widths in quantum wells for general lighting application
Author(s): I-Hsiang Hung; Yu-Hsiang Lai; Zhe Chuan Feng; Gang Li; Ian Ferguson; Weijie Lu
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Paper Abstract

High brightness InGaN/GaN multiple quantum well structures have been grown on sapphire substrates by metalorganic chemical vapor deposition, for wide range visible light emitting diode application. The compositions and sizes within quantum wells were designed according to the requirements on the LED performance. Samples were investigated by a variety of characterization techniques. Optimization of the growth parameters and process was realized and evidenced by high resolution X-ray diffraction measurements. Optical spectroscopic properties were further studied and quantum confined stokes shift was observed from room temperature and low temperature photoluminescence as well as time resolved photoluminescence measurements.

Paper Details

Date Published: 18 August 2010
PDF: 12 pages
Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 77840Z (18 August 2010); doi: 10.1117/12.859780
Show Author Affiliations
I-Hsiang Hung, National Taiwan Univ. (Taiwan)
Yu-Hsiang Lai, National Taiwan Univ. (Taiwan)
Zhe Chuan Feng, National Taiwan Univ. (Taiwan)
Gang Li, Rainbow Optoelectronics Material Shanghai Co., Ltd. (China)
Ian Ferguson, The Univ. of North Carolina at Charlotte (United States)
Weijie Lu, Fisk Univ. (United States)


Published in SPIE Proceedings Vol. 7784:
Tenth International Conference on Solid State Lighting
Ian Ferguson; Matthew H. Kane; Nadarajah Narendran; Tsunemasa Taguchi, Editor(s)

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