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Proceedings Paper

Femtosecond laser direct writing of nanoscale silicon lines
Author(s): James I. Mitchell; Se Jun Park; C. Adam Watson; Pornsak Srisungsitthisunti; Chookiat Tansarawiput; Minghao Qi; E. A. Stach; Chen Yang; Xianfan Xu
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Paper Abstract

Direct writing using a femtosecond laser provides an accurate, repeatable and efficient means of creating nanoscale lines for electronic applications circumventing the standard fabrication methods that require expensive masks and numerous processing steps. Femtosecond laser writing makes these nanoscale lines by using a phase zone plate to focus the laser pulse onto a silicon substrate in a chemical vapor deposition chamber flowing silane. The silane is decomposed onto the narrow heated area of the substrate as the laser scans across leaving behind a thin line of silicon deposition. This manufacturing technique utilizes a high precision optical metrology system and a high precision motion control system to make this nanomanufacturing possible. It has been shown to successfully make as many as 100 silicon lines on the order of a few hundred nanometers in width. The size and crystal structure of these lines are characterized using Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM).

Paper Details

Date Published: 28 August 2010
PDF: 5 pages
Proc. SPIE 7764, Nanoengineering: Fabrication, Properties, Optics, and Devices VII, 77640E (28 August 2010); doi: 10.1117/12.859729
Show Author Affiliations
James I. Mitchell, Purdue Univ. (United States)
Se Jun Park, Purdue Univ. (United States)
C. Adam Watson, Purdue Univ. (United States)
Pornsak Srisungsitthisunti, Purdue Univ. (United States)
Chookiat Tansarawiput, Purdue Univ. (United States)
Minghao Qi, Purdue Univ. (United States)
E. A. Stach, Purdue Univ. (United States)
Chen Yang, Purdue Univ. (United States)
Xianfan Xu, Purdue Univ. (United States)


Published in SPIE Proceedings Vol. 7764:
Nanoengineering: Fabrication, Properties, Optics, and Devices VII
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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