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Proceedings Paper

Band structure engineering of ZnO[sub]1-x[/sub]Se[sub]x[/sub] alloys
Author(s): Marie A. Mayer; Derrick T. Speaks; Kin Man Yu; Samuel S. Mao; Eugene E. Haller; Wladek Walukiewicz
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Paper Abstract

ZnO1-xSex films have been prepared through pulsed laser deposition as a step toward stable films with a band gap appropriate for water splitting. The films show a clear red shift in absorption with increasing Se content and a shift in the flat band voltage toward spontaneity. Due to the films' electron affinities, there exists a natural tunnel junction between these n- ZnO1-xSex films when grown on the p-side of a Si diode. The overall performance, emphasized by flat band potential measurements, can be improved by growing films on Si p-n diodes.

Paper Details

Date Published: 24 August 2010
PDF: 7 pages
Proc. SPIE 7770, Solar Hydrogen and Nanotechnology V, 77700C (24 August 2010); doi: 10.1117/12.859482
Show Author Affiliations
Marie A. Mayer, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)
Derrick T. Speaks, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)
Kin Man Yu, Lawrence Berkeley National Lab. (United States)
Samuel S. Mao, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)
Eugene E. Haller, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Wladek Walukiewicz, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 7770:
Solar Hydrogen and Nanotechnology V
Hicham Idriss; Heli Wang, Editor(s)

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