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Proceedings Paper

Optical properties of dielectric thin films including quantum dots
Author(s): F. Flory; Y. J. Chen; C. C. Lee; L. Escoubas; J. J. Simon; P. Torchio; J. Le Rouzo; S. Vedraine; Hassina Derbal-Habak; Jorg Ackermann; Ivan Shupyk; Yahia Didane
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Paper Abstract

Depending on the minimum size of their micro/nano structure, thin films can exhibit very different behaviors and optical properties. From optical waveguides down to artificial anisotropy, through diffractive optics and photonic crystals, the application changes when decreasing the minimum feature size. Rigorous electromagnetic theory can be used to model most of the components but when the size is of a few nanometers, quantum theory has also to be used. These materials including quantum structures are of particular interest for other applications, in particular for solar cells, because of their luminescent and electronic properties. We show that the properties of electrons in multiple quantum wells can be easily modeled with a formalism similar to that used for multilayer waveguides. The effects of different parameters, in particular coupling between wells and well thickness dispersion, on possible discrete energy levels or energy band of electrons and on electron wave functions is given. When such quantum confinement appears the spectral absorption and the extinction coefficient dispersion with wavelength is modified. The dispersion of the real part of the refractive index can then be deduced from the Kramers- Krönig relations. Associated with homogenization theory this approach gives a new model of refractive index for thin films including quantum dots. Absorption spectra of samples composed of ZnO quantum dots in PMMA layers are in preparation are given.

Paper Details

Date Published: 24 August 2010
PDF: 7 pages
Proc. SPIE 7766, Nanostructured Thin Films III, 77660J (24 August 2010); doi: 10.1117/12.859464
Show Author Affiliations
F. Flory, Institut Materiaux Microelectronique Nanosciences de Provence, CNRS, Aix-Marseille Univ. (France)
Ecole Centrale Marseille (France)
Y. J. Chen, Institut Materiaux Microelectronique Nanosciences de Provence, CNRS, Aix-Marseille Univ. (France)
National Central Univ. (Taiwan)
C. C. Lee, National Central Univ. (Taiwan)
L. Escoubas, Institut Materiaux Microelectronique Nanosciences de Provence, CNRS, Aix-Marseille Univ. (France)
J. J. Simon, Institut Materiaux Microelectronique Nanosciences de Provence, CNRS, Aix-Marseille Univ. (France)
P. Torchio, Institut Materiaux Microelectronique Nanosciences de Provence, CNRS, Aix-Marseille Univ. (France)
J. Le Rouzo, Institut Materiaux Microelectronique Nanosciences de Provence, CNRS, Aix-Marseille Univ. (France)
S. Vedraine, Institut Materiaux Microelectronique Nanosciences de Provence, CNRS, Aix-Marseille Univ. (France)
Hassina Derbal-Habak, Institut Materiaux Microelectronique Nanosciences de Provence, CNRS, Aix-Marseille Univ. (France)
Jorg Ackermann, CINAM, CNRS, Aix-Marseille Univ. (France)
Ivan Shupyk, CINAM, CNRS, Aix-Marseille Univ. (France)
Yahia Didane, CINAM, CNRS, Aix-Marseille Univ. (France)


Published in SPIE Proceedings Vol. 7766:
Nanostructured Thin Films III
Raúl J. Martin-Palma; Yi-Jun Jen; Akhlesh Lakhtakia, Editor(s)

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