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Proceedings Paper

New filter rating method in practice for sub-30-nm lithography process filter
Author(s): Toru Umeda; Takehito Mizuno; Shuichi Tsuzuki; Toru Numaguchi
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Paper Abstract

A new method for rating retention in lithography process filters has been developed. The method employs a gold nanoparticle contaminant challenge, inductively coupled plasma mass spectrometry as a concentration detector, and dynamic light scattering as a particle size detector, all of which enable accurate, reliable filter retention rating below 30 nm. There is good agreement between results obtained with the new method and results obtained with a conventional polystyrene latex bead challenge. A filter that was rated at 10 nm using extrapolative methods was confirmed to be 10 nm using the new challenge test. Microbridge removal efficiency of polyethylene filters rated by the new method was studied in a 193 nm (dry) lithography process and the new method was verified. When applied to commercially available filters that are rated below 30 nm, the new method revealed significant differences in removal efficiency among similarly labeled filters.

Paper Details

Date Published: 30 March 2010
PDF: 9 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391F (30 March 2010); doi: 10.1117/12.859457
Show Author Affiliations
Toru Umeda, Nihon Pall Ltd. (Japan)
Takehito Mizuno, Nihon Pall Ltd. (Japan)
Shuichi Tsuzuki, Nihon Pall Ltd. (Japan)
Toru Numaguchi, Nihon Pall Ltd. (Japan)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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