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Proceedings Paper

A new single-photon avalanche diode in 90nm standard CMOS technology
Author(s): Mohammad Azim Karami; Marek Gersbach; Edoardo Charbon
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Paper Abstract

A single-photon avalanche diode (SPAD) fabricated in a 90nm standard CMOS process is reported. The detector comprises an octagonal multiplication region and a guard ring to prevent premature edge breakdown using exclusively standard layers. The proposed structure is the result of a systematic study aimed at miniaturization, while optimizing overall performance. The device exhibits a dark count rate of 16 kHz at room temperature, a maximum photon detection probability of 16% and the jitter of 398ps at a wavelength of 637nm. Applications include time-of-flight 3D vision, fluorescence lifetime imaging microscopy, fluorescence correlation spectroscopy, and time-resolved gamma/X-ray imaging. Standard characterization of the SPAD was performed in different bias voltages and temperatures.

Paper Details

Date Published: 26 August 2010
PDF: 6 pages
Proc. SPIE 7780, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon, 77801F (26 August 2010); doi: 10.1117/12.859435
Show Author Affiliations
Mohammad Azim Karami, Technische Univ. Delft (Netherlands)
Marek Gersbach, Ecole Polytechnique Federale de Lausanne (Switzerland)
Edoardo Charbon, Technische Univ. Delft (Netherlands)

Published in SPIE Proceedings Vol. 7780:
Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon
Eustace L. Dereniak; Randolph E. Longshore; Manijeh Razeghi; John P. Hartke; Ashok K. Sood; Paul D. LeVan, Editor(s)

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