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Proceedings Paper

Bio-inspired organic field effect transistors
Author(s): Mihai Irimia-Vladu; Pavel A. Troshin; Günther Schwabegger; Marius Bodea; Reinhard Schwödiauer; Jeffrey W. Fergus; Vladimir Razumov; Siegfried Bauer; Niyazi Serdar Sariciftci
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Paper Abstract

Two major concerns in the world nowadays are the plastic consumption and waste. Because to the economic growth and the incessant demand of plastics in developing countries, plastics consumption is projected to increase by a factor of two to three during the actual decade1. As an intuitive example, the amount of municipal solid waste (estimated per person per year) averages ~440 kg for China, ~550 kg for the European Union and ~790 kg for the United States, with almost 50% of the waste being electronic products and plastics1,2. Green technology based on biodegradable/compostable materials is perceived as an ultimate goal for solving waste problems. Currently there are numerous efforts for producing compostable plastic materials for applications in daily life products, such as plastic bags and disposable dishware. When such low-end products are fabricated with compostable materials, electronics included in such goods should be also based on materials that are easily compostable.

Paper Details

Date Published: 17 August 2010
PDF: 5 pages
Proc. SPIE 7778, Organic Field-Effect Transistors IX, 777803 (17 August 2010); doi: 10.1117/12.859117
Show Author Affiliations
Mihai Irimia-Vladu, Johannes Kepler Univ. Linz (Austria)
Pavel A. Troshin, Institute of Problems of Chemical Physics (Russian Federation)
Günther Schwabegger, Johannes Kepler Univ. Linz (Austria)
Marius Bodea, Johannes Kepler Univ. Linz (Austria)
Reinhard Schwödiauer, Johannes Kepler Univ. Linz (Austria)
Jeffrey W. Fergus, Auburn Univ. (United States)
Vladimir Razumov, Institute of Problems of Chemical Physics (Russian Federation)
Siegfried Bauer, Johannes Kepler Univ. Linz (Austria)
Niyazi Serdar Sariciftci, Johannes Kepler Univ. Linz (Austria)

Published in SPIE Proceedings Vol. 7778:
Organic Field-Effect Transistors IX
Zhenan Bao; Iain McCulloch, Editor(s)

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