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Proceedings Paper

Optical, structural, and nuclear scientific studies of AlGaN with high Al composition
Author(s): Tse Yang Lin; Yee Ling Chung; Lin Li; Shude Yao; Y. C. Lee; Zhe Chuan Feng; Ian T. Ferguson; Weijie Lu
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Paper Abstract

AlGaN epilayers with higher Al-compositions were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire. Trimethylgallium (TMGa), trimethylaluminium (TMAl) and NH3 were used as the source precursors for Ga, Al, and N, respectively. A 25 nm AlN nucleation layer was first grown at low-temperature of 590 °C at 300 Torr. Followed, AlxGa1-xN layers were grown at 1080 °C on low-temperature AlN nucleation layers. The heterostructures were characterized by a series of techniques, including x-ray diffraction (XRD), Rutherford backscattering (RBS), photoluminescence (PL), scanning electron microscopy (SEM) and Raman scattering. Precise Al compositions were determined through XRD, RBS, and SEM combined measurements. Room Temperature Raman Scattering spectra shows three major bands from AlGaN alloys, which are AlN-like, A1 longitudinal optical (LO) phonon modes, and E2 transverse optical (TO) band, respectively, plus several peak comes from the substrate. Raman spectral line shape analysis lead to an optical determination of the electrical property free carrier concentration of AlGaN. The optical properties of AlGaN with high Al composition were presented here.

Paper Details

Date Published: 18 August 2010
PDF: 11 pages
Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 778415 (18 August 2010); doi: 10.1117/12.859106
Show Author Affiliations
Tse Yang Lin, National Taiwan Univ. (Taiwan)
Yee Ling Chung, National Taiwan Univ. (Taiwan)
Lin Li, Peking Univ. (China)
Shude Yao, Peking Univ. (China)
Y. C. Lee, Tung Nan Institute of Technology (Taiwan)
Zhe Chuan Feng, National Taiwan Univ. (Taiwan)
Ian T. Ferguson, The Univ. of North Carolina at Charlotte (United States)
Weijie Lu, Fisk Univ. (United States)


Published in SPIE Proceedings Vol. 7784:
Tenth International Conference on Solid State Lighting
Ian Ferguson; Matthew H. Kane; Nadarajah Narendran; Tsunemasa Taguchi, Editor(s)

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