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Proceedings Paper

SI-traceable calibration of line-width roughness of 25nm NanoCD standard
Author(s): V. A. Ukraintsev; M. Helvey; Y. Guan; B. P. Mikeska
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Paper Abstract

SI-traceable critical dimension 3DAFM was used to characterize 25 nm NanoCD linewidth standard. The standard has a uniquely low linewidth roughness (LWR) and can be used as a benchmark during development of advanced patterning technologies. The following results were obtained: (a) Mean LWR for two 25 nm standards with uncertainty ±0.02 nm (0.95 CL). The LWR is below 0.7 nm (1s). (b) Distribution of LWR and linewidth (LW) at 3 line heights (20, 50 and 80% from the line top) along 3 mm segment of the standards. Variations are below 0.25 nm and 0.07 nm (1s) for LW and LWR, respectively. (c) Spatial power spectra of LWR of the standards. The NanoCD spectrum resembles reported earlier spectra of polycrystalline Si.

Paper Details

Date Published: 2 April 2010
PDF: 9 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76383U (2 April 2010); doi: 10.1117/12.858774
Show Author Affiliations
V. A. Ukraintsev, Nanometrology International, Inc. (United States)
M. Helvey, VLSI Standards, Inc. (United States)
Y. Guan, VLSI Standards, Inc. (United States)
B. P. Mikeska, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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