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Proceedings Paper

Thinning of PLZT ceramic wafers for sensor integration
Author(s): Na Jin; Weiguo Liu
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Paper Abstract

Characteristics of transparent PLZT ceramics can be tailored by controlling the component of them, and therefore showed excellent dielectric, piezoelectric, pyroelectric and ferroelectric properties. To integrate the ceramics with microelectronic circuit to realize integrated applications, the ceramic wafers have to be thinned down to micrometer scale in thickness. A7/65/35 PLZT ceramic wafer was selected in this study for the thinning process. Size of the wafer was 10×10mm with an initial thickness of 300μm. A novel membrane transfer process (MTP) was developed for the thinning and integration of the ceramic wafers. In the MTP process, the ceramic wafer was bonded to silicon wafer using a polymer bonding method. Mechanical grinding method was applied to reduce the thickness of the ceramic. To minimize the surface damage in the ceramic wafer caused by the mechanical grinding, magnetorheological finishing (MRF) method was utilized to polish the wafer. White light interference (WLI) apparatus was used to monitor the surface qualities of the grinded and ploished ceramic wafers. For the PLZT membrane obtained from the MTP process, the final thickness of the thinned and polished wafer was 10μm, the surface roughness was below 1nm in rms, and the flatness was better than λ/5.

Paper Details

Date Published: 26 August 2010
PDF: 4 pages
Proc. SPIE 7780, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon, 77800K (26 August 2010); doi: 10.1117/12.858610
Show Author Affiliations
Na Jin, Xi'an Technological Univ. (China)
Weiguo Liu, Xi'an Technological Univ. (China)

Published in SPIE Proceedings Vol. 7780:
Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon
Eustace L. Dereniak; Randolph E. Longshore; Manijeh Razeghi; John P. Hartke; Ashok K. Sood; Paul D. LeVan, Editor(s)

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