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Proceedings Paper

Ultrafast bandgap photonics semiconductor phenomenology: response to ultra-short pulse laser
Author(s): Michael K. Rafailov
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Paper Abstract

It is known that ultra-fast laser is able to change solids physical state: to melt, to evaporate, to ionize. It is less known that ultra-fast laser is able to change semiconductor optical state: to bleach it. Such short time changes in semiconductor optical characteristics depend on the bandgap structure, therefore we are introducing the term - Ultrafast Bandgap Photonics. Phenomena of Ultrafast bandgap photonics are time-dependent and the optical effects are reversible: ultra-fast laser "bleaches" semiconductor and temporally changes spectral reflectivity, absorptivity, and transmittance as well as polarization characteristics. Applications of Ultra-fast bandgap photonics are remote control of semiconductor characteristics and material properties. Ultrafast Bandgap Photonics effects may temporally alter photodetector's fundamental characteristics - responsivity and detectivity as well as its response time and spectral bandwidth - all of these may happen without changes in photodetector electrical response. While Ultrafast Bandgap Photonics applications are directly depend on pulse dwell time and pulse repetition rate; it is important to say that laser energy per pulse should be carefully managed. In this paper we discuss some foundations of ultra-fast bandgap photonics - specifically for low pulse energy ultrafast laser.

Paper Details

Date Published: 26 August 2010
PDF: 9 pages
Proc. SPIE 7780, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon, 778009 (26 August 2010); doi: 10.1117/12.858568
Show Author Affiliations
Michael K. Rafailov, TRG (United States)


Published in SPIE Proceedings Vol. 7780:
Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon
Eustace L. Dereniak; John P. Hartke; Paul D. LeVan; Randolph E. Longshore; Ashok K. Sood; Manijeh Razeghi, Editor(s)

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