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Proceedings Paper

Changes in vertical PAG distribution inside photoresist due to the variation of concentration
Author(s): Jae Hyun Kim; Sung Il Ahn; Jin Goo Yoon; Youngho Kim; Seung-Ki Chae; Wang-Cheol Zin
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Paper Abstract

Vertical distribution of photo acid generator (PAG) inside CA-type photoresist is inferred from X-ray reflectivity (XRR) analysis which gives the information on the vertical electron density profile of thin film. The difference between the density distribution of normal photoresist and pure resin indicates the approximate distribution of PAG. The electron density profile of each film is obtained by fitting method for the XRR results based on distorted wave Born approximation (DWBA) approach. In this study, trends in density distributions varied by concentration of PAG suggest that the inhomogeneous distributions of PAG near the surface or interface of photoresist film occurs due to interactions between PAG molecules and substrate, or polymer resin. Distributions with low concentration of PAG (2 wt%) show that the PAG molecules tend to be concentrated near the surface of photoresist, while over-load of PAG (20 wt%) results in the density increase near the interface region.

Paper Details

Date Published: 30 March 2010
PDF: 7 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391P (30 March 2010); doi: 10.1117/12.858362
Show Author Affiliations
Jae Hyun Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sung Il Ahn, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jin Goo Yoon, POSTECH (Korea, Republic of)
Youngho Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seung-Ki Chae, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Wang-Cheol Zin, POSTECH (Korea, Republic of)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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