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Proceedings Paper

Characterization of an InGaN-based photo-emissive device
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Paper Abstract

InGaN alloy fluctuations have been exploited in many nitride optoelectronic devices. This work reports on the application of InGaN alloy fluctuations in a packaged vacuum electronic device utilizing an InGaN photocathode as the detector element. The resulting image intensifier is the first ever InGaN imaging detector. Exploitation of the particular InGaN properties of alloy fluctuations has several positive consequences for photocathodes. One, it is advantages because of the possibility of extending the spectral response to the longer wavelengths with lower average indium concentrations. Two, in achieving a longer wavelength response, this lessens the strain at the sapphire-AlN-InGaN interface because a lower average In percentage can be used. Thirdly, the larger bandgap InGaN matrix material will have a lower amount of thermionic emission coupled with this longer wavelength photoresponse. Finally, an InGaN alloy with visible response holds the promise in that it can be grown directly on a sapphire window as opposed to the compression bonding of GaAs as originally reported by Antypas and Edgecumbe.

Paper Details

Date Published: 5 May 2010
PDF: 10 pages
Proc. SPIE 7666, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense IX, 766620 (5 May 2010); doi: 10.1117/12.858173
Show Author Affiliations
J. W. Glesener, L-3 Electro-Optical Systems (United States)
A. M. Dabiran, SVT Associates, Inc. (United States)
J. P. Estrera, L-3 Electro-Optical Systems (United States)


Published in SPIE Proceedings Vol. 7666:
Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense IX
Edward M. Carapezza, Editor(s)

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