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Proceedings Paper

Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes
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Paper Abstract

A novel heterostructured dual carrier multiplication extremely high gain MWIR InAs/InGaSb Type II strained layer superlattice (T2SLS) impact ionization engineered (I2E) APD was designed and simulated. Spatially separated T2SLS electron and hole multiplication regions are designed using 14 band k.p bandstructure modeling. In the novel dual carrier device, the I2E T2SLS electron and hole multiplication regions are placed right next to each other. This allows for a carrier feedback between the electron and hole multiplication regions. This feedback between the electron and hole multiplication regions allows for extremely high gain values for the overall device. While the individual gain of the electron and hole multiplication regions can be kept extremely low, the overall gain can be >103. This can be achieved at a reverse bias of 3.5V. The effective k is designed to be approximately .07. Such low bias operation of the MWIR APD allows for active operation and passive mode operation on the same pixel using standard ROIC and this opens up possibility of large format dual mode imaging arrays.

Paper Details

Date Published: 3 May 2010
PDF: 6 pages
Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76601W (3 May 2010); doi: 10.1117/12.858012
Show Author Affiliations
Siddhartha Ghosh, Univ. of Illinois at Chicago (United States)
Koushik Banerjee, Univ. of Illinois at Chicago (United States)
Qing Duan, Univ. of Illinois at Chicago (United States)
Christoph H. Grein, Univ. of Illinois at Chicago (United States)
Elena A. Plis, The Univ. of New Mexico (United States)
Sanjay Krishna, The Univ. of New Mexico (United States)
Majeed M. Hayat, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7660:
Infrared Technology and Applications XXXVI
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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