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Proceedings Paper

Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observation
Author(s): Andre F. Wong; Matthew J. Nelson; Elena A. Plis; Michael F. Skrutskie; Lihong Yao; Tom Vandervelde; Sanjay Krishna; Hasul Kim; Arezou Khoshakhlagh; Stephen A. Myers
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Paper Abstract

We report on the testing of a set of InAs/GaSb multicolor strained-layer superlattice photodetectors and Dotin- Well detectors grown with InAs dots in InGaAs/GaAs wells fabricated by the Center for High Technology Materials at the University of New Mexico. These devices are 2-color devices sensitive to near-IR and mid-IR wavelengths. The wavelength sensitivities of these devices are a function of the applied forward and reverse bias. We present measurements of the dark current and relative spectral response of these photodetectors measured at both cryogenic and room temperatures.

Paper Details

Date Published: 22 July 2010
PDF: 10 pages
Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 774223 (22 July 2010); doi: 10.1117/12.857786
Show Author Affiliations
Andre F. Wong, Univ. of Virginia (United States)
Matthew J. Nelson, Univ. of Virginia (United States)
Elena A. Plis, The Univ. of New Mexico (United States)
Michael F. Skrutskie, Univ. of Virginia (United States)
Lihong Yao, Univ. of Virginia (United States)
Tom Vandervelde, Tufts Univ. (United States)
Sanjay Krishna, The Univ. of New Mexico (United States)
Hasul Kim, The Univ. of New Mexico (United States)
Arezou Khoshakhlagh, The Univ. of New Mexico (United States)
Stephen A. Myers, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7742:
High Energy, Optical, and Infrared Detectors for Astronomy IV
Andrew D. Holland; David A. Dorn, Editor(s)

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