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Proceedings Paper

Characterization of a ΣΔ-based CMOS monolithic detector
Author(s): Brandon J. Hanold; Donald F. Figer; Brian Ashe; Thomas Montagliano; Donald J. Stauffer; Zeljko Ignjatovic; Danijel Maricic; Shouleh Nikzad; Todd J. Jones
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Paper Abstract

This paper is a progress report of the design and characterization of a monolithic CMOS detector with an on-chip ΣΔ ADC. A brief description of the design and operation is given. Backside processing steps to allow for backside illumination are summarized. Current characterization results are given for pre- and post-thinned detectors. Characterization results include measurements of: gain photodiode capacitance, dark current, linearity, well depth, relative quantum efficiency, and read noise. Lastly, a detector re-design is described; and initial measurements of its photodiode capacitance and read noise are presented.

Paper Details

Date Published: 16 July 2010
PDF: 17 pages
Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 77420A (16 July 2010); doi: 10.1117/12.857176
Show Author Affiliations
Brandon J. Hanold, Rochester Institute of Technology (United States)
Donald F. Figer, Rochester Institute of Technology (United States)
Brian Ashe, Rochester Institute of Technology (United States)
Thomas Montagliano, Rochester Institute of Technology (United States)
Donald J. Stauffer, Rochester Institute of Technology (United States)
Zeljko Ignjatovic, Univ. of Rochester (United States)
Danijel Maricic, Univ. of Rochester (United States)
Shouleh Nikzad, Jet Propulsion Lab. (United States)
Todd J. Jones, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 7742:
High Energy, Optical, and Infrared Detectors for Astronomy IV
Andrew D. Holland; David A. Dorn, Editor(s)

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