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Proceedings Paper

First results from electrical qualification measurements on DEPFET pixel detector
Author(s): Petra Majewski; Ladislav Andricek; Thomas Lauf; Peter Lechner; Gerhard Lutz; Jonas Reiffers; Rainer Richter; Gerhard Schaller; Martina Schnecke; Florian Schopper; Heike Soltau; Alexander Stefanescu; Lothar Strüder; Johannes Treis
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Paper Abstract

We report on the first results from a new setup for electrical qualification measurements of DEPFET pixel detector matrices. In order to measure the transistor properties of all pixels, the DEPFET device is placed into a benchtest setup and electrically contacted via a probecard. Using a switch matrix, each pixel of the detector array can be addressed individually for characterization. These measurements facilitate to pre-select the best DEPFET matrices as detector device prior to the mounting of the matrix and allow to investigate topics like the homogeneity of transistor parameters on device, wafer and batch level in order to learn about the stability and reproducibility of the production process. Especially with regard to the detector development for the IXO Wide Field Imager (WFI), this yield learning will be an important tool. The first electrical qualification measurements with this setup were done on DEPFET macropixel detector flight hardware, which will form the FPAs of the Mercury Imaging X-ray Spectrometer (MIXS) on board of the 5th ESA cornerstone mission BepiColombo. The DEPFET array consists of 64×64 macropixel for which the transfer, output and clear characteristics were measured.

Paper Details

Date Published: 20 July 2010
PDF: 9 pages
Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 77421H (20 July 2010); doi: 10.1117/12.856908
Show Author Affiliations
Petra Majewski, PNSensor GmbH (Germany)
Ladislav Andricek, Max-Planck-Institut Halbleiterlabor (Germany)
Max-Planck-Institut für Physik (Germany)
Thomas Lauf, Max-Planck-Institut Halbleiterlabor (Germany)
Max-Planck-Institut für extraterrestrische Physik (Germany)
Peter Lechner, PNSensor GmbH (Germany)
Gerhard Lutz, PNSensor GmbH (Germany)
Jonas Reiffers, Max-Planck-Institut Halbleiterlabor (Germany)
Max-Planck-Institut für extraterrestrische Physik (Germany)
Rainer Richter, Max-Planck-Institut Halbleiterlabor (Germany)
Max-Planck-Institut für Physik (Germany)
Gerhard Schaller, Max-Planck-Institut Halbleiterlabor (Germany)
Max-Planck-Institut für extraterrestrische Physik (Germany)
Martina Schnecke, Max-Planck-Institut Halbleiterlabor (Germany)
Max-Planck-Institut für Physik (Germany)
Florian Schopper, Max-Planck-Institut Halbleiterlabor (Germany)
Max-Planck-Institut für extraterrestrische Physik (Germany)
Heike Soltau, PNSensor GmbH (Germany)
Alexander Stefanescu, Max-Planck-Institut Halbleiterlabor (Germany)
Johannes Gutenberg Univ. Mainz (Germany)
Lothar Strüder, Max-Planck-Institut Halbleiterlabor (Germany)
Max-Planck-Institut für extraterrestrische Physik (Germany)
Johannes Treis, Max-Planck-Institut Halbleiterlabor (Germany)
Max-Planck-Institut für Sonnensystemforschung (Germany)


Published in SPIE Proceedings Vol. 7742:
High Energy, Optical, and Infrared Detectors for Astronomy IV
Andrew D. Holland; David A. Dorn, Editor(s)

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