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Proceedings Paper

Radiation hardness studies of InGaAs photodiodes at 30, 52, & 98 MeV and fluences to 10^10 protons/cm^2
Author(s): Brian J. Baptista; Stuart L. Mufson
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Paper Abstract

We report the effects of radiation damage due to ionizing protons on InGaAs photodiodes. The photodiodes were irradiated at energies of 30, 52, and 98 MeV and fluences up to 1010 protons/cm2 in experiments at the Indiana University Cyclotron Facility. The photodiodes were tested for changes in their dark current, their relative responsivity as a function of wavelength from 1000 - 1600 nm, and their absolute responsivity in narrow bandpasses spread throughout the same wavelength region. The measurements were all made with detectors traceable to NIST standards. At these exposures and energies, the most significant effects are seen in the dark current levels.

Paper Details

Date Published: 19 July 2010
PDF: 11 pages
Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 774225 (19 July 2010); doi: 10.1117/12.856481
Show Author Affiliations
Brian J. Baptista, Indiana Univ. (United States)
Stuart L. Mufson, Indiana Univ. (United States)


Published in SPIE Proceedings Vol. 7742:
High Energy, Optical, and Infrared Detectors for Astronomy IV
Andrew D. Holland; David A. Dorn, Editor(s)

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