Share Email Print
cover

Proceedings Paper

Dielectric functions and optical parameters of heavily doped and/or highly excited Si:P
Author(s): M. Basta; Z. T. Kuznicki
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A complete model for the heavily doped and/or highly excited Si:P dielectric function is presented in the limit of the free-carrier gas approach. New interesting features of Si:P dielectric functions are presented and discussed. The influence of dopants and free-carriers is taken into account independently and their common features usually assumed in the literature, are analysed. The influence of Drude damping time on the optical response of heavily doped Si:P is studied. All results are compared with experimental data.

Paper Details

Date Published: 18 May 2010
PDF: 9 pages
Proc. SPIE 7725, Photonics for Solar Energy Systems III, 77251J (18 May 2010); doi: 10.1117/12.856308
Show Author Affiliations
M. Basta, ENSPS Pôle API Parc d'Innovation (France)
Z. T. Kuznicki, ENSPS Pôle API Parc d'Innovation (France)


Published in SPIE Proceedings Vol. 7725:
Photonics for Solar Energy Systems III
Ralf B. Wehrspohn; Andreas Gombert, Editor(s)

© SPIE. Terms of Use
Back to Top