Share Email Print
cover

Proceedings Paper

Cu/p-Si Schottky photodetectors at 1.55 μm
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this paper the realization and the characterization of a resonant cavity enhanced photodetector (RCE), completely silicon compatible and working at 1.55 micron, is reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. In order to obtain a fabrication process completely compatible with standard CMOS silicon technology, a photodetector having copper (Cu) as Schottky metal has been realized. Performances devices in terms of responsivity, free spectral range, finesse are reported.

Paper Details

Date Published: 18 May 2010
PDF: 7 pages
Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77190R (18 May 2010); doi: 10.1117/12.855994
Show Author Affiliations
M. Casalino, Institute for Microelectronics and Microsystems (Italy)
M. Gioffrè, Institute for Microelectronics and Microsystems (Italy)
G. Coppola, Institute for Microelectronics and Microsystems (Italy)
M. Iodice, Institute for Microelectronics and Microsystems (Italy)
L. Moretti, Seconda Univ. degli Studi di Napoli (Italy)
I. Rendina, Institute for Microelectronics and Microsystems (Italy)
L. Sirleto, Institute for Microelectronics and Microsystems (Italy)


Published in SPIE Proceedings Vol. 7719:
Silicon Photonics and Photonic Integrated Circuits II
Giancarlo Cesare Righini, Editor(s)

© SPIE. Terms of Use
Back to Top