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Proceedings Paper

Tin monosulfide thin films grown by atomic layer deposition using tin 2,4 pentandionate and hydrogen sulfide
Author(s): Jay Yu Kim; Steven M. George
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Paper Abstract

Tin monosulfide (SnS) was grown by atomic layer deposition (ALD) using sequential exposures of tin(II) 2,4- pentanedionate (Sn(acac)2) and hydrogen sulfide (H2S). In situ quartz crystal microbalance (QCM) studies showed that the SnS ALD mass gain per cycle was 11-12 ng/cm2 at 175°C on a gold-covered QCM sensor. Using a film density of 5.07 g/cm3 determined by X-ray reflectivity measurements, these mass gains are equivalent to SnS ALD growth rates of 0.22-0.24 Å/cycle. The ratio of the mass loss and mass gain ratio |▵m2/▵m1| from the H2S and Sn(acac)2 reactions was |▵m2/▵m1| ~0.32 at 175 °C. This measured ratio is close to the predicted ratio from the proposed surface chemistry for SnS ALD. The SnS ALD was self-limiting versus the Sn(acac)2 and H2S exposures. The SnS ALD growth rate was also independent of substrate temperature from 125-225 °C. X-ray fluorescence studies confirmed a Sn/S atomic ratio of ~1.0 for the SnS ALD films. X-ray photoelectron spectroscopy measurements revealed that the SnS ALD films contained oxygen impurities at 15-20 at% after air exposure. These oxygen-containing SnS ALD films displayed a bandgap of ~1.87 eV that is higher than the SnS bulk value of ~1.3 eV.

Paper Details

Date Published: 24 August 2010
PDF: 13 pages
Proc. SPIE 7769, High and Low Concentrator Systems for Solar Electric Applications V, 776907 (24 August 2010); doi: 10.1117/12.855890
Show Author Affiliations
Jay Yu Kim, Univ. of Colorado at Boulder (United States)
Steven M. George, Univ. of Colorado at Boulder (United States)


Published in SPIE Proceedings Vol. 7769:
High and Low Concentrator Systems for Solar Electric Applications V
Lori E. Greene; Raed A. Sherif, Editor(s)

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