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Proceedings Paper

Research on dielectric properties of gallium arsenides by using THz-TDS
Author(s): Jiusheng Li; Xiaoli Zhao; Jianrui Li
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Paper Abstract

By using terahertz time domain spectroscopy (THz-TDS) system, the terahertz dielectric properties of various gallium arsenides were tested in the frequency range extending from 0.2 to 1.5 THz. The power absorption coefficient and refractive index of various resistivity gallium arsenides were measured and compared. The refractive index of the high resistivity and ultra-high resistivity GaAs are equal to be 6.53 and 5.9, respectively. The variation of the refractive index of the GaAs was less than 1%, ranging from 0.2 to 1.5THz, but the absorption coefficient of the ultra-high resistivity GaAs showed very different frequency-dependent behaviors, ranging from 0.02cm-1 to 2.21cm-1, within the investigated frequency range. The results show that the ultra-high resistivity GaAs will be a good candidate material for terahertz transmission waveguide.

Paper Details

Date Published: 3 December 2009
PDF: 6 pages
Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76310O (3 December 2009); doi: 10.1117/12.855861
Show Author Affiliations
Jiusheng Li, China Jiliang Univ. (China)
Xiaoli Zhao, China Jiliang Univ. (China)
Jianrui Li, China Jiliang Univ. (China)


Published in SPIE Proceedings Vol. 7631:
Optoelectronic Materials and Devices IV
Jian-Jun He; Guang-Hua Duan; Fumio Koyama; Ming C. Wu, Editor(s)

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