Share Email Print
cover

Proceedings Paper

Germanium p-i-n photodiode on silicon for integrated photonic applications
Author(s): Jay Mathews; Radek Roucka; Change Weng; John Tolle; José Menéndez; John Kouvetakis
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The application of silicon photonic technologies to optical telecommunications requires the development of near-infrared detectors monolithically integrated to the Si platform. Recently, efforts in this area have focused on developing detectors from pure-Ge grown epitaxially on Si substrates. Much effort has been spent on achieving growth of high quality, relaxed Ge films for device structures, but low temperature growth and processing compatible with complementary-metal-oxide-semiconductor (CMOS) technology has yet to be achieved. In this paper, we report on p-i-n heterostructure photodiodes fabricated from Ge films grown directly on Si substrates using a low temperature chemical vapor deposition (CVD) process. The heterostructures were grown on arsenic-doped (n-type) Si(100) with resistivity 0.003 Ω-cm. A 350nm thick layer of intrinsic Ge was deposited first as the active region, followed by 100nm of boron-doped (p-type) Ge. Ohmic contacts were formed by evaporation of Cr and Au. The diodes were characterized with respect to their dark currents and responsivities in the near-IR. For a 60-μm-diameter device at room temperature, the dark current densities were on the order of 10-2 A/cm2 and 103 A/cm2 at -1V and 1V, respectively, the "turn-on" voltage was found to be 0.26 V, and the ideality factor n was found to be 1.2. The external quantum efficiency of the devices was measured at room temperature over the range 1-1.8 μm. The responsivities at 1.3 and 1.55 μm were found to be 0.26 and 0.11, respectively.

Paper Details

Date Published: 16 February 2010
PDF: 8 pages
Proc. SPIE 7606, Silicon Photonics V, 76061L (16 February 2010); doi: 10.1117/12.855384
Show Author Affiliations
Jay Mathews, Arizona State Univ. (United States)
Radek Roucka, Arizona State Univ. (United States)
Change Weng, Arizona State Univ. (United States)
John Tolle, Arizona State Univ. (United States)
José Menéndez, Arizona State Univ. (United States)
John Kouvetakis, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 7606:
Silicon Photonics V
Joel A. Kubby; Graham T. Reed, Editor(s)

© SPIE. Terms of Use
Back to Top