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Proceedings Paper

Carrier depletion based silicon optical modulators
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Paper Abstract

Silicon optical modulators have generated an increasing interest in the recent years, as their performances are crucial to achieve high speed optical links. Among possibilities to achieve optical modulation in silicon-based materials, index variation by free carrier concentration variation has demonstrated good potentiality. High speed and low loss silicon modulators can be obtained by carrier depletion inside lateral PN or PIPIN diodes. When the diode is reverse biased, refractive index variations are obtained and then phase modulation of the guided wave is obtained. Mach-Zehnder interferometers are used to convert phase modulation into intensity modulation. Experimental results are presented for both PN and PIPIN diodes.

Paper Details

Date Published: 13 May 2010
PDF: 7 pages
Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 771903 (13 May 2010); doi: 10.1117/12.855255
Show Author Affiliations
Delphine Marris-Morini, Institut d'Electronique Fondamentale, CNRS, Univ. Paris Sud (France)
Gilles Rasigade, Institut d'Electronique Fondamentale, CNRS, Univ. Paris Sud (France)
Laurent Vivien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris Sud (France)
David J. Thomson, Univ. of Surrey (United Kingdom)
Frédéric Y. Gardes, Univ. of Surrey (United Kingdom)
Graham T. Reed, Univ. of Surrey (United Kingdom)
Jean-Marc Fédéli, CEA, LETI, Minatec (France)
Paul Crozat, Institut d'Electronique Fondamentale, CNRS, Univ. Paris Sud (France)
Eric Cassan, Institut d'Electronique Fondamentale, CNRS, Univ. Paris Sud (France)


Published in SPIE Proceedings Vol. 7719:
Silicon Photonics and Photonic Integrated Circuits II
Giancarlo Cesare Righini, Editor(s)

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