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Proceedings Paper

Performance limits of room-temperature InAsSb photodiodes
Author(s): J. Wróbel; R. Ciupa; A. Rogalski
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Paper Abstract

The theoretical performance of medium wavelength infrared (MWIR) InAsSb-based ternary alloy photodiodes is examined theoretically taking into account thermal generation governed by the Auger and radiative mechanisms. The contribution of spin-off band on carrier lifetime in p-type InAsSb ternary is re-examined due to new insight into composition dependence of spin-orbit-splitting band gap energy. The investigations are carried out for photodiodes operated at room temperature. The effects of doping profiles on the photodiode parameters (R0A product and detectivity) are considered. The theoretical predictions of photodiode parameters are compared with experimental data published in the literature.

Paper Details

Date Published: 4 May 2010
PDF: 9 pages
Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 766033 (4 May 2010); doi: 10.1117/12.855196
Show Author Affiliations
J. Wróbel, Military Univ. of Technology (Poland)
R. Ciupa, Military Univ. of Technology (Poland)
A. Rogalski, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 7660:
Infrared Technology and Applications XXXVI
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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