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Design, modeling and optimization of gallium nitride-based photonic crystal structures
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Paper Abstract

We present results of numerical modeling of photonic crystal (PhC) structures fabricated in gallium nitride (GaN). GaN is a wide band gap semiconductor material with large refractive index and very good thermal and mechanical properties, so it is considered a valuable candidate for photonic crystal application - in particular for devices exposed to the harsh environment. In this paper are considered the ideal 2D PhC with infinite high for a different lattice structures and calculated optical band gap maps for each. We also calculated air-bridge type slab and "sandwich-type" PhC slabs with finite height. The dependence of transmission and reflection spectra on holes size, width and profile of "sandwich-type" PhC slab structure are investigated. All calculations were performed using plane wave expansion method (PWE) and finite difference time domain method (FDTD).

Paper Details

Date Published: 13 May 2010
PDF: 9 pages
Proc. SPIE 7713, Photonic Crystal Materials and Devices IX, 77131Z (13 May 2010); doi: 10.1117/12.855180
Show Author Affiliations
Konrad Ptasínski, Wroclaw Univ. of Technology (Poland)
Szymon Lis, Wroclaw Univ. of Technology (Poland)
Marcin Wielichowski, Wroclaw Univ. of Technology (Poland)
Sergiusz Patela, Wroclaw Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 7713:
Photonic Crystal Materials and Devices IX
Hernán R. Míguez; Sergei G. Romanov; Lucio Claudio Andreani; Christian Seassal, Editor(s)

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